最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 12V 最大漏极电流Id Drain Current| 5.3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.030Ω/Ohm @5.5A,10V 开启电压Vgs(th) Gate-Source Threshold Voltage| 0.5V 耗散功率Pd Power Dissipation| 1.38W Description & Applications| Advanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET The Advanced Power MOSFETs from APEC provide the designer with the best combination ofastswitching, low on-resistance and cost-effectiveness. 描述与应用| 高级电源 N沟道增强模式 功率MOSFET 先进的功率MOSFET提供从APEC 设计师与快速切换的最佳组合, 低导通电阻和成本效益
Advanced Power Electronics(富鼎先进电子)
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Advanced Power Electronics(富鼎先进电子)
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Advanced Power Electronics(富鼎先进电子)
AP2306GN N沟道MOSFET 20V 5.3A SOT-23/SC-59 marking/标记 N62 低导通电阻
Advanced Power Electronics(富鼎先进电子)
Advanced Power Electronics(富鼎先进电子)
Advanced Power Electronics(富鼎先进电子)
Advanced Power Electronics(富鼎先进电子)
Advanced Power Electronics(富鼎先进电子)
ADVANCED POWER ELECTRONICS CORP AP2306AGN-HF-3TR 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV
Advanced Power Electronics(富鼎先进电子)
Advanced Power Electronics(富鼎先进电子)
Advanced Power Electronics(富鼎先进电子)
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