反向电压VrReverse Voltage| 50V \---|--- 平均整流电流IoAVerage Rectified Current| 150mA/0.15A 最大正向压降VFForward Voltage(Vf) | 550mV/0.55V 最大耗散功率PdPower dissipation| Description & Applications| • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super high speed switching • For small current rectification • Two isolated elements are contained in one package, allowing high-density mounting • IF(AV) = 200 mA and VR < 50 V are achieved • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF and good rectification efficiency 描述与应用| •肖特基势垒二极管(SBD) •硅外延平面型 •超高速开关 •对于小电流整流 •两个独立肖特基二极管并排,允许高密度安装 •实现IF(AV)=200 mA和VR<50 V •最适用于高频率整顿,因为其反向恢复时间短(TRR) •低正向电压VF和良好的整流效率
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