RN2106 数据手册 - Toshiba（东芝）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 47KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 0.1 直流电流增益hFE DC Current Gain(hFE)| 80 截止频率fT Transtion Frequency(fT)| 200MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Fewer parts and simplified manufacturing process • Complementary to RN1101~RN1106 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •晶体管的硅PNP外延型（PCT工艺） •内置偏置电阻 •简化电路设计更少的部件和简化制造工艺 •互补RN1101~~ RN1106 应用 •开关，逆变电路，接口电路和驱动器电路应用