最大源漏极电压VdsDrain-Source Voltage| -20V
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●最大栅源极电压Vgs(±)Gate-Source Voltage| 6V
●最大漏极电流IdDrain Current| -0.4A
●源漏极导通电阻RdsDrain-Source On-State Resistance| 0.8Ω @-350mA,-4.5V
●开启电压Vgs（th）Gate-Source Threshold Voltage| -0.45V
●耗散功率PdPower Dissipation| 175mW/0.175W
●Description & Applications| FEATURES • Halogen-free Option Available • High-Side Switching • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • TrenchFET Power MOSFETs • 2000 V ESD Protection
●描述与应用| •无卤股权 •高边开关 •低导通电阻：1.2Ω •低阈值：0.8 V（典型值） •开关速度快：14纳秒 •1.8 V操作 •的TrenchFET 功率MOSFET •2000 V ESD保护
